The BS616LV1622 is a high-performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 3.0uA at 3V/25oC and maximum access time of 55ns at 3.0V/85oC . This device provide three control inputs and three states output drivers for easy memory expansion. The BS616LV1622 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV1622 is available in 48-pin 12mmx20mm TSOP1 package.
The BS616LV1622 is a high‑performance, very low‑power static RAM offered in a 48‑pin TSOP1 package (12 mm × 20 mm). It can be configured for 1 M × 16‑bit or 2 M × 8‑bit operation via the CIO pin and supports a wide supply range of 2.4 V to 5.5 V.
Key electrical characteristics include a typical standby current of 3.0 µA at 3 V, a maximum access time of 55 ns at 3.0 V/85 °C, and operation over commercial (0 °C to +70 °C) and industrial (‑40 °C to +85 °C) temperature ranges. The device features three control inputs, three‑state output drivers, and automatic power‑down when deselected.
| Memory organization | 1M x 16 or 2M x 8 bit switchable |
|---|---|
| Supply voltage range | 2.4 V – 5.5 V |
| Typical standby current (3 V) | 3.0 µA |
| Package type | 48‑pin TSOP1 (12 mm × 20 mm) |
| Power dissipation | 1.0 W |
| Data retention voltage | as low as 1.5 V |
It operates from 2.4 V to 5.5 V.
Typical standby current is 3.0 µA at 3 V.