This document describes an automotive MOSFET product with low on-resistance and fast switching speed, suitable for automotive and other applications. The product has a 175°C operating temperature and improved repetitive avalanche rating.
The IRF1302S and IRF1302L are automotive‑grade HEXFET® power MOSFETs designed for low on‑resistance, high current capability, and operation up to 175 °C. Their planar stripe design delivers efficient performance for a wide range of automotive and industrial applications.
The document lists absolute maximum ratings, typical electrical parameters, package dimensions, and typical waveforms such as output characteristics, gate charge, and avalanche performance. It also includes handling guidelines, tape‑and‑reel dimensions, and reference to application notes for PCB layout and thermal design.
| Continuous Drain Current (25 °C) | 174 A |
|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.0 V typical |
| Drain‑to‑Source Breakdown Voltage (Vds) | 20 V |
| Operating Junction Temperature Range | -55 °C to +175 °C |
The IRF1302S/IRF1302L can handle up to 174 A continuous drain current at 25 °C.
Both variants are supplied in a TO‑262 (D2Pak) package.
The device is rated for junction temperatures from –55 °C up to +175 °C.