This document introduces a HEXFET® power MOSFET specifically designed for automotive applications, featuring extremely low on-resistance, high temperature operation, fast switching speed, and improved repetitive avalanche rating.
The IRF1405 is a HEXFET® power MOSFET designed for automotive applications such as electric power steering, ABS, and climate control. It features ultra‑low on‑resistance, a 175 °C junction rating, and fast switching performance.
This datasheet lists absolute maximum ratings, detailed electrical characteristics, thermal resistance values, package dimensions (TO‑220AB), and test circuit diagrams for avalanche and switching performance, helping designers integrate the device safely and efficiently.
| Continuous Drain Current @ 25 °C | 169 A |
|---|---|
| Continuous Drain Current @ 100 °C | 118 A |
| Power Dissipation @ 25 °C | 330 W |
| Junction‑to‑Case Thermal Resistance | 0.45 °C·W |
| Gate Threshold Voltage (Vgs(th)) | 2.0 V |
| Static Drain‑to‑Source On‑Resistance (Rds(on)) | 46 mΩ |
| Drain‑to‑Source Breakdown Voltage (Vds) | 55 V |
| Maximum Junction Temperature | 175 °C |
The IRF1405 can handle a continuous drain current of 169 A at 25 °C.
The device’s drain‑to‑source breakdown voltage is rated at 55 V.
The IRF1405 is supplied in a TO‑220AB package.
The typical gate threshold voltage is 2.0 V.