IRF7338 is a high performance, low on-resistance N and P channel MOSFET from International Rectifier, suitable for a variety of power applications.
The IRF7338 is a dual MOSFET in a SO‑8 package that combines an N‑channel and a P‑channel device. It is designed for low on‑resistance and high efficiency in battery and load‑management applications, and is compatible with vapor‑phase, infrared, or wave soldering processes.
The document provides absolute maximum ratings, electrical characteristics, typical output and transfer curves, on‑resistance versus temperature and voltage, as well as detailed package dimensions and tape‑and‑reel handling information.
| Drain‑to‑Source Voltage (VDS) | 12 V (N‑Channel), -12 V (P‑Channel) |
|---|---|
| Power Dissipation @ 25 °C | 2.0 W |
| Gate‑to‑Source Voltage (VGS) | +12 V (N‑Channel), +8 V (P‑Channel) |
| Package Type | Dual SO‑8, available in Tape & Reel |
The N‑channel device can handle up to 12 V and the P‑channel up to –12 V.
The part is rated for 2.0 W of power dissipation at 25 °C.