This document describes an automotive MOSFET product with low on-resistance and high repetitive avalanche current rating. It utilizes the latest processing techniques to achieve extremely low on-resistance and fast switching speed, making it suitable for automotive and other applications.
The IRF1405S/L is a HEXFET® power MOSFET designed for automotive applications such as electric power steering, ABS, wiper control, and climate control. It features an ultra‑low on‑resistance, high temperature operation up to 175 °C, and fast switching performance.
The document lists absolute maximum ratings, detailed electrical characteristics, thermal resistance values, capacitance data, and avalanche performance curves. It also includes package dimensions, tape‑and‑reel handling information, and recommended layout guidelines for low stray inductance designs.
| Continuous Drain Current @ 25 °C | 131 A |
|---|---|
| Continuous Drain Current @ 100 °C | 93 A |
| Power Dissipation @ 25 °C | 200 W |
| Gate‑to‑Source Threshold Voltage | 2.0 V |
| Drain‑to‑Source Breakdown Voltage | 55 V |
| Static Drain‑to‑Source On‑Resistance (typical) | 46 mΩ |
| Junction‑to‑Case Thermal Resistance | 0.75 °C/W |
| Junction‑to‑Ambient Thermal Resistance (PCB mount) | 40 °C/W |
| Total Gate Charge (typical) | 170 nC |
| Input Capacitance (Ciss) | 5480 pF |
The IRF1405S/L can handle a continuous drain current of 131 A at 25 °C.
The device has a drain‑to‑source breakdown voltage of 55 V.
Typical static on‑resistance is 46 mΩ when Vgs = 10 V and Id = 101 A.
The IRF1405S/L is rated for junction temperatures from –55 °C to +175 °C.