Key facts
- Model
- IRF130
- Category
- Transistor
- Documents
- 3
- Languages
- EN
- Last added
- 2012-06-04
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International Rectifier IRF1302S/IRF1302L Datasheet
The IRF1302S and IRF1302L are automotive‑grade HEXFET® power MOSFETs designed for low on‑resistance, high current capability, and operation up to 175 °C. Their planar stripe design delivers efficient performance for a wide range of automotive and industrial applications.
The document lists absolute maximum ratings, typical electrical parameters, package dimensions, and typical waveforms such as output characteristics, gate charge, and avalanche performance. It also includes handling guidelines, tape‑and‑reel dimensions, and reference to application notes for PCB layout and thermal design.
International Rectifier IRF130 specifications
| Continuous Drain Current (25 °C) | 174 A |
|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.0 V typical |
| Drain‑to‑Source Breakdown Voltage (Vds) | 20 V |
| Operating Junction Temperature Range | -55 °C to +175 °C |
All International Rectifier IRF130 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current at 25 °C?
The IRF1302S/IRF1302L can handle up to 174 A continuous drain current at 25 °C.
Which package does the IRF1302S/IRF1302L use?
Both variants are supplied in a TO‑262 (D2Pak) package.
What is the continuous drain current rating of the IRF1302 at 25 °C?
The IRF1302 can conduct up to 180 A continuous drain current at 25 °C with Vgs = 10 V.
What is the on‑resistance (Rds(on)) of the IRF1302?
The typical on‑resistance is 3.3 mΩ when Vgs = 10 V.
What is the maximum continuous drain current for the IRF130?
The IRF130 can handle a continuous drain current of 14 A at VGS = 10 V and 25 °C.
What is the breakdown voltage rating of the IRF130?
The device is rated for a drain‑to‑source breakdown voltage of 100 V.