This datasheet provides information about the IRF1312 power MOSFET, including its package type, maximum voltage, maximum current, and maximum power
The IRF1312 series (IRF1312, IRF1312S, IRF1312L) are HEXFET® power MOSFETs intended for high‑frequency DC‑DC converters, motor control, and uninterruptible power supplies. The document provides absolute maximum ratings, static and dynamic characteristics, avalanche behavior, and package information.
Key sections include absolute maximum ratings, static drain‑to‑source breakdown voltage, on‑resistance, gate charge data, thermal resistance, and recommended test circuits. Package dimensions for TO‑220AB and TO‑262 are also listed, along with tape‑and‑reel handling details.
| Pulsed Drain Current | 380 A |
|---|---|
| Power Dissipation @ 25°C | 3.8 W |
| Total Gate Charge (Qg) | 93 nC |
| Gate-to-Source Threshold Voltage (VGS(th)) | 3.5 V |
The typical total gate charge is 93 nC.