IRF1310S HEXFET® Power MOSFET PD is a high-performance power MOSFET manufactured by the fourth generation International Rectifier (IR) HEXFET technology
The IRF1310S is a surface‑mount HEXFET® Power MOSFET offered by International Rectifier. It features ultra‑low on‑resistance, high current capability, and a 100 V drain‑source rating, making it suitable for a wide range of high‑efficiency applications.
The datasheet provides absolute maximum ratings, detailed electrical characteristics, thermal performance data, and package information for the SMD‑220 footprint, along with part‑marking and ordering details.
| Pulsed Drain Current | 160 A |
|---|---|
| Power Dissipation (junction) | 170 W |
| Power Dissipation (PCB mount) | 3.8 W |
| Gate‑to‑Source Voltage | +20 V |
| Maximum Avalanche Energy | 17 mJ |
| Junction‑to‑Case Thermal Resistance | 0.90 °C/W |
| Junction‑to‑Ambient (PCB Mount) Thermal Resistance | 40 °C/W |
| Operating Temperature Range | -55 °C to +175 °C |
It is supplied in the SMD‑220 surface‑mount package.
The device is rated for a gate‑to‑source voltage of +20 V.
It operates from –55 °C up to +175 °C.