The IRF1404S/IRF1404L is the Seventh Generation HEXFET® Power MOSFET from International Rectifier and utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1404L) is available for low- profile applications.
The IRF1404S and IRF1404L are seventh‑generation HEXFET® power MOSFETs offering ultra‑low on‑resistance, fast switching, and high current capability. They are designed for efficient, reliable operation in a wide range of industrial power applications.
Both devices are available in the D?Pak surface‑mount package (IRF1404S) and a through‑hole TO‑262 package (IRF1404L). The datasheet includes detailed electrical parameters, thermal data, package outlines, and recommended mounting and soldering guidelines.
| Drain‑to‑Source Breakdown Voltage (VDS) | 40 V |
|---|---|
| Power Dissipation @ 25 °C | 3.8 W |
| Total Gate Charge (Qg) | 160 nC |
| Package Types | D?Pak surface‑mount (IRF1404S) and through‑hole TO‑262 (IRF1404L) |
| Through‑hole Version Availability | IRF1404L |
The IRF1404S is supplied in a D?Pak surface‑mount package, while the IRF1404L is available in a through‑hole TO‑262 package.