IRF1404Z is a high performance power MOSFET device produced by IR company, it has ultra low on-resistance, 175 °C junction temperature, fast switching speed and other features, suitable for automotive electronics and other applications
The IRF1404Z is an automotive‑grade HEXFET® power MOSFET featuring ultra‑low on‑resistance, high current capability, and a 175 °C junction rating. It is designed for efficient, reliable operation in automotive and other demanding applications.
The document lists absolute maximum ratings, detailed electrical parameters, typical output and transfer curves, package dimensions, and thermal performance data, along with guidelines for circuit layout and avalanche handling.
| Drain-to-Source Breakdown Voltage (Vds) | 40 V |
|---|---|
| Continuous Drain Current @ 25 °C (Id) | 190 A |
| Continuous Drain Current @ 100 °C (Id) | 130 A |
| Pulsed Drain Current (Id,pulse) | 750 A |
| Power Dissipation (Pd) | 220 W |
| Junction‑to‑Case Thermal Resistance (Rjc) | 0.67 °C/W |
| Gate Threshold Voltage (Vgs(th)) | 2.0 – 4.0 V |
| On‑Resistance (Rds(on)) | 2.7 – 3.7 mΩ |
| Maximum Junction Temperature (Tjmax) | 175 °C |
| Package Type | TO‑220AB |
The IRF1404Z can handle a continuous drain current of 190 A at 25 °C.
The device is rated for a drain‑to‑source breakdown voltage of 40 V.
It is supplied in a TO‑220AB package.
The MOSFET is specified for a maximum junction temperature of 175 °C.