The JANTXV2N6756 is a power MOSFET from International Rectifier. Its maximum continuous current is 14A, its maximum peak current is 56A, its maximum voltage is 20V, and its maximum power dissipation is 75W.
The IRF130 is a 100 V N‑channel HEXFET® power MOSFET designed for low on‑state resistance and high transconductance, suitable for switching power supplies, motor controls, inverters, and high‑energy pulse circuits. Its geometry and processing deliver very low RDS(on) and fast switching performance.
The datasheet lists absolute maximum ratings such as 14 A continuous drain current, 75 W power dissipation, and a breakdown voltage of 100 V, along with thermal resistance values and detailed pin assignments for the TO‑204AA/AE package. Mechanical dimensions and test circuit diagrams are also included.
| Drain-to-Source Breakdown Voltage (VDS) | 100 V |
|---|---|
| Continuous Drain Current (Id) @ VGS=10 V, 25 °C | 14 A |
| On‑State Resistance (RDS(on)) typical | 0.18 Ω |
| Gate Threshold Voltage (VGS(th)) | 2.0 V |
| Total Gate Charge (Qg) | 12 nC |
| Maximum Power Dissipation (PD) | 75 W |
| Package Type | TO‑204AA/AE (Modified TO‑3) |
The IRF130 can handle a continuous drain current of 14 A at VGS = 10 V and 25 °C.
The device is rated for a drain‑to‑source breakdown voltage of 100 V.
Typical RDS(on) is 0.18 Ω measured at VGS = 10 V and Id = 9 A.
The IRF130 uses a TO‑204AA/AE (modified TO‑3) through‑hole package.