This document describes a HEXFET® power MOSFET specifically designed for automotive applications, featuring extremely low on-resistance, high temperature operation, and suitability for a wide range of applications.
The IRF1302 is an automotive‑grade HEXFET® power MOSFET designed for low on‑resistance, high current capability, and fast switching. It features a 175 °C junction rating and a TO‑220AB package suitable for demanding automotive and industrial applications.
The document lists absolute maximum ratings, detailed electrical characteristics such as drain current, on‑resistance, gate charge, and avalanche performance, as well as package dimensions, thermal resistance values, and test circuit examples.
| Continuous Drain Current (25 °C, Vgs=10 V) | 180 A |
|---|---|
| Power Dissipation (25 °C) | 230 W |
| Gate‑to‑Source Voltage | +20 V |
| Junction‑to‑Case Thermal Resistance | 0.65 °C/W |
| Junction‑to‑Ambient (PCB mount) Thermal Resistance | 62 °C/W |
| On‑Resistance (Rds(on)) at Vgs=10 V | 3.3 mΩ |
| Gate Threshold Voltage | 2.0 V – 4.0 V |
| Total Gate Charge (Vgs=10 V) | 79 nC – 120 nC |
| Drain‑to‑Source Breakdown Voltage | 20 V |
| Maximum Junction Temperature | 175 °C |
| Package Type | TO‑220AB |
The IRF1302 can conduct up to 180 A continuous drain current at 25 °C with Vgs = 10 V.
The typical on‑resistance is 3.3 mΩ when Vgs = 10 V.
The device is rated for a maximum junction temperature of 175 °C.
The IRF1302 is supplied in a TO‑220AB package.