R6015ANX is a Nch 600V 15A power MOSFET from ROHM. The device features low on-resistance, fast switching speed, simple drive circuits, and easy parallel use.
The R6015ANX is a 600 V, 15 A N‑channel power MOSFET in a TO‑220FM package. It offers low on‑resistance, fast switching, and a guaranteed 30 V gate‑source rating, making it suitable for switching power supplies and other high‑voltage applications.
The datasheet lists absolute maximum ratings, thermal resistance values, detailed electrical characteristics, and mechanical dimensions. It also includes typical output curves, avalanche behavior, and packaging information for designers.
| Drain‑Source voltage (VDS) | 600 V |
|---|---|
| Power dissipation (PD) at 25 °C | 50 W |
| Gate‑Source voltage (VGS) | 30 V |
| Thermal resistance, junction‑to‑ambient (RθJA) | 70 °C/W |
| Package type | TO‑220FM |
| Marking | R6015ANX |
The device is rated for a maximum drain‑source voltage of 600 V.
The MOSFET is supplied in a TO‑220FM package.