The R6008FNX is a Nch 600V 8A Power MOSFET from ROHM. It features low on-resistance, fast switching speed, simple drive circuits, and is suitable for switching power supply applications.
The R6008FNX is a 600 V, 8 A N‑channel Power MOSFET with low on‑resistance and fast switching, suitable for switching power supplies and other high‑voltage applications. The datasheet provides absolute maximum ratings, electrical characteristics, thermal data, package dimensions, and typical performance curves.
Key features include a guaranteed +30 V gate‑source voltage, simple drive requirements, easy parallel operation, and RoHS‑compliant, lead‑free packaging. Detailed specifications such as drain‑source voltage, current limits, avalanche energy, and thermal resistance are listed for design reference.
| Drain‑Source voltage (VDS) | 600 V |
|---|---|
| Pulsed drain current (ID,pulse) | 32 A |
| Gate‑Source voltage (VGS) rating | +30 V |
| Avalanche energy (single pulse) | 4.3 mJ |
| Power dissipation (PD) at 25 °C | 50 W |
| Maximum junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Package dimensions (TO‑220FM, length A) | 16.60 mm – 17.60 mm |
The maximum drain‑source voltage is 600 V.
The gate‑source voltage is guaranteed up to +30 V.
Yes, the device is Pb‑free and RoHS compliant.