This document describes the features and applications of ROHM's R5019ANX 10V Nch MOSFET, including low on-resistance, low input capacitance, and high ESD. It also provides the dimensions and absolute maximum ratings of the product, as well as thermal resistance and electrical characteristics.
The R5019ANX is a silicon N‑channel MOSFET supplied in a TO‑220RM package. It offers low on‑resistance, low input capacitance, and high ESD robustness, making it suitable for switching applications.
The document provides detailed electrical characteristics, absolute maximum ratings, thermal resistance data, and typical application circuits, along with measurement setups for gate charge and avalanche testing.
| Drain‑source voltage (VDS) | 500 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Continuous drain current (ID) | 19 A |
| Pulsed drain current (ID(pulse)) | 76 A |
| Power dissipation (PD) | 50 W |
| Thermal resistance (RθJC) | 2.5 °C·W |
| Input capacitance (Ciss) | 2050 pF |
| Output capacitance (Coss) | 1200 pF |
The device can withstand up to 500 V between drain and source.
It is rated for a continuous drain current of 19 A.
The MOSFET is supplied in a TO‑220RM package.