This document describes the features and characteristics of the R6012ANJ 10V Drive Nch MOSFET produced by ROHM Co., Ltd., including low on-resistance, fast switching speed, gate-source voltage guaranteed to be ±30V, simple drive circuits, and easy parallel use.
The R6012ANJ is a 10 V drive N‑channel MOSFET with low on‑resistance, fast switching speed, and a guaranteed gate‑source voltage of +30 V. It is designed for easy parallel use and simple drive circuits.
Typical applications include switching in audio‑visual equipment, office‑automation devices, communication gear, and other electronic appliances. The device is supplied in a surface‑mount package with detailed dimensions and thermal specifications.
| Drain‑source voltage (VDS) | 600 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Total power dissipation (PD) | 100 W |
| Maximum channel temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
The maximum drain‑source voltage is 600 V.
The device is rated for a gate‑source voltage of +30 V.
It can dissipate up to 100 W at a case temperature of 25 °C.