R6015ANJ is a silicon N-channel MOSFET with low on-resistance, fast switching speed, gate-source voltage (VGSS) guaranteed to be ±30V, simple drive circuits, and easy parallel use.
The R6015ANJ is a 10 V drive N‑channel MOSFET from ROHM Semiconductor, designed for low on‑resistance and fast switching. It is suitable for a variety of switching applications where a high drain‑source voltage rating is required.
Key specifications include a 600 V drain‑source voltage rating, +30 V gate‑source rating, typical on‑state resistance of 0.23 Ω, and a total power dissipation of 100 W. The datasheet also provides detailed electrical characteristics, packaging information, and measurement circuit diagrams to aid designers in implementing the device.
| Drain‑source voltage (VDS) | 600 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Static on‑state resistance (RDS(on)) | 0.23 Ω (typ) |
| Total power dissipation (PD) | 100 W |
The maximum drain‑source voltage is 600 V.
The device guarantees a gate‑source voltage of +30 V.
The typical on‑state resistance is 0.23 Ω.