R6010ANX is a low-voltage drive N-channel MOSFET with the following features: low on-resistance, fast switching speed, gate-source voltage guaranteed to be ±30V, simple drive circuits, and easy parallel use.
The R6010ANX is a 10 V drive N‑channel MOSFET in a TO‑220FM package, offering low on‑resistance and fast switching speed. It is intended for general‑purpose electronic equipment such as audio‑visual, office‑automation, and communication devices.
The datasheet lists key parameters including a 600 V drain‑source voltage, +30 V gate‑source rating, 10 A continuous drain current, and 50 W power dissipation. Packaging, absolute maximum ratings, thermal resistance, and typical characteristic curves are also provided for design reference.
| Drain‑source voltage (VDS) | 600 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Continuous drain current (ID) | 10 A |
| Pulsed drain current (ID,pulse) | 40 A |
| Power dissipation (PD) | 50 W |
| Channel‑to‑case thermal resistance (RθJC) | 2.5 °C·W |
| Maximum storage temperature | -55 °C to +150 °C |
| Maximum junction temperature | 150 °C |
The device can withstand up to 600 V between drain and source.
It is rated for a continuous drain current of 10 A.
The gate‑source voltage is guaranteed up to +30 V.
The maximum power dissipation is 50 W.