R6008FNJ is a ROHM N-channel MOSFET with 10V drive, low on-resistance, fast switching speed, easy to drive, etc.
The R6008FNJ is a 10 V drive N‑channel MOSFET designed for switching applications. It features fast reverse recovery, low on‑resistance, and high voltage ratings, making it suitable for simple drive circuits and parallel use.
The datasheet lists absolute maximum ratings, thermal resistance, detailed electrical characteristics, and example measurement circuits. It also includes packaging details and a notice on usage limits and safety considerations.
| Drain‑source voltage (VDS) | 600 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Continuous drain current (ID) | 8 A |
| Pulsed drain current (ID,pulse) | 32 A |
| Power dissipation (PD) | 50 W |
| Maximum channel temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Input capacitance (Ciss) | 580 pF |
| Output capacitance (Coss) | 450 pF |
| Reverse recovery time (tr) | 67 ns |
| Turn‑on delay time (t_on) | 20 ns |
| Total gate charge (Qg) | 20 nC |
The maximum drain‑source voltage is 600 V.
The device can handle a continuous drain current of 8 A.
The gate‑source voltage is rated up to +30 V.
It can dissipate up to 50 W at a 25 °C case temperature.