R6008ANX is a high-voltage and high-power MOSFET produced by ROHM. Its maximum working voltage is 600V and its maximum continuous current is 8A. It has the characteristics of low on-resistance, fast switching speed, simple drive circuit, and easy parallel use.
The R6008ANX is a 600 V, 8 A N‑channel power MOSFET offered in a TO‑220FM package. It features low on‑resistance, fast switching, and a guaranteed +30 V gate‑source rating, making it suitable for switching power supplies and other high‑voltage applications.
The datasheet lists absolute maximum ratings, thermal resistance values, detailed electrical characteristics, gate‑charge data, body‑diode parameters, and mechanical dimensions. Packaging options include tape‑and‑reel for automated assembly.
| Drain‑Source voltage (VDS) | 600 V |
|---|---|
| Power dissipation (PD) at 25 °C | 50 W |
| Junction temperature (Tj) max | 150 °C |
| Thermal resistance, junction‑to‑case (RθJC) | 2.5 °C/W |
| Gate‑Source voltage rating (VGS) | +30 V |
| Package type | TO‑220FM |
The device is rated for a maximum drain‑source voltage of 600 V.
The MOSFET is supplied in a TO‑220FM package, typically on tape‑and‑reel.
The device is rated for a junction temperature up to 150 °C.