This document describes the features and characteristics of the R6012ANX Nch 600V 12A Power MOSFET from ROHM Co. Ltd., including low on-resistance, fast switching speed, simple drive circuits, and easy parallel use.
The R6012ANX is a 600 V, 12 A N‑channel power MOSFET offered in a TO‑220FM package. It features low on‑resistance, fast switching, and a guaranteed gate‑source voltage of +30 V, making it suitable for switching power supply applications and parallel operation.
The datasheet includes absolute maximum ratings, thermal resistance data, detailed electrical characteristics, gate‑charge information, body‑diode parameters, and mechanical dimensions. Packaging options include bulk and reel formats, and the device complies with RoHS requirements.
| Drain‑Source voltage (VDS) | 600 V |
|---|---|
| Pulsed drain current (ID,pulse) | 48 A |
| Gate‑Source voltage (VGS) | +30 V |
| Power dissipation (PD) at 25 °C | 50 W |
| Maximum junction temperature (Tj) | 150 °C |
| Thermal resistance, junction‑to‑case (RθJC) | 2.5 °C/W |
The R6012ANX can withstand a drain‑source voltage of up to 600 V.
It is supplied in a TO‑220FM package, available in bulk or reel formats.
Yes, the device is Pb‑free and RoHS compliant.