This document describes the features and characteristics of the ROHM R6012FNX 10V Drive Nch MOSFET, including fast reverse recovery time, low on-resistance, fast switching speed, etc.
The R6012FNX is a silicon N‑channel MOSFET in a TO‑220FM package. It offers fast reverse‑recovery time, low on‑resistance, fast switching speed, and simple drive circuits, making parallel use easy.
Typical applications include switching and inner‑circuit functions in audio‑visual equipment, office‑automation devices, communication gear and other general‑purpose electronic products. The datasheet provides absolute maximum ratings, detailed electrical characteristics, packaging information and measurement circuit diagrams.
| Drain‑source voltage (VDS) | 600 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Continuous drain current (ID) | 3 A |
| Power dissipation (PD) | 50 W |
| Maximum junction temperature (Tj) | 150 °C |
| Thermal resistance, case to junction (RθJC) | 2.5 °C/W |
| Typical on‑resistance (RDS(on)) | 0.51 Ω |
| Input capacitance (Ciss) | 1300 pF |
| Output capacitance (Coss) | 890 pF |
| Total gate charge (Qg) | 35 nC |
The device can withstand up to 600 V between drain and source.
It is rated for a continuous drain current of 3 A.
Typical RDS(on) is 0.51 Ω at VGS = 10 V.
The gate‑source voltage is limited to +30 V.