R6006ANX is a 600V 6A Nch power MOSFET from ROHM. It features a low on-resistance, fast switching speed, simple drive circuits, parallel use and RoHS compliance.
The R6006ANX is a 600 V, 6 A N‑channel power MOSFET offered in a TO‑220FM package. It features low on‑resistance, fast switching, and a guaranteed +30 V gate‑source rating, making it suitable for switching power supplies and other high‑voltage applications.
The datasheet lists absolute maximum ratings, thermal resistance values, detailed electrical characteristics, and typical output curves. Packaging information, dimensions, and recommended soldering conditions are also included for designers and manufacturers.
| Drain‑Source voltage (VDS) | 600 V |
|---|---|
| Gate‑Source voltage (VGS) | +30 V |
| Junction temperature (Tj) | 150 °C |
| Package | TO‑220FM |
The device is rated for a maximum drain‑source voltage of 600 V.
A wave‑soldering temperature of 265 °C for 10 seconds is recommended.