R5016FNX is a 10V drive Nch MOSFET with low on-resistance, low input capacitance and high ESD. It is suitable for switching applications.
The R5016FNX is a 10 V drive N‑channel MOSFET offered in a TO‑220FM package. It features low on‑resistance, low input capacitance, and high ESD robustness, making it suitable for switching applications.
The datasheet details absolute maximum ratings, thermal resistance, and typical electrical characteristics such as a 500 V drain‑source voltage rating, +30 V gate‑source rating, and 50 W power dissipation. Application circuits and measurement setups are also included.
| Drain‑source voltage (VDS) | 500 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Power dissipation (PD) | 50 W |
| Thermal resistance, junction‑to‑case (RθJC) | 25 °C/W |
The datasheet specifies a maximum drain‑source voltage of 500 V.
It is supplied in a TO‑220FM package.
The continuous drain current is listed as 3 A, with a pulsed rating of 16 A.