R5016ANX is a N-channel MOSFET launched by Toshiba. It is mainly used in switching power supplies. This product has the characteristics of low on-resistance, fast switching speed, wide safe operating area, etc.
The R5016ANX is a 10 V drive N‑channel MOSFET featuring low on‑resistance, fast switching speed, and a wide safe operating area. It is designed for simple drive circuits and easy parallel use.
The datasheet lists absolute maximum ratings, electrical parameters such as drain‑source voltage, gate‑source voltage, on‑state resistance, and thermal characteristics, as well as typical characteristic curves and measurement circuit diagrams for switching and avalanche testing.
| Drain‑source voltage (VDS) | 500 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Continuous drain current (ID) | 16 A |
| Pulsed drain current (ID,pulse) | 64 A |
| On‑state resistance (RDS(on)) | 0.27 Ω (typ) |
| Total power dissipation | 50 W |
| Maximum channel temperature | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Input capacitance (Ciss) | 1800 pF |
| Output capacitance (Coss) | 750 pF |
| Reverse recovery time | 1 ns |
The maximum drain‑source voltage is 500 V.
The device is rated for a gate‑source voltage of +30 V.
It can handle a continuous drain current of 16 A.