This document is a datasheet for the ROHM R6006AND Nch MOSFET. The product features low on-resistance, high-speed switching, wide SOA, and is suitable for switching applications.
The ROHM R6006AND is a 10 V drive N‑channel MOSFET featuring low on‑resistance, high‑speed switching, and a wide safe operating area. The datasheet provides absolute maximum ratings, electrical characteristics, thermal resistance, and example application circuits.
Key sections include Features, Absolute Maximum Ratings, Electrical Characteristics, Thermal Resistance, Measurement Circuits, and a Notice with legal and usage information.
| Drain‑source voltage (VDS) | 600 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Continuous drain current (ID) | 3 A |
| Power dissipation (PD) | 40 W |
| Channel‑to‑case thermal resistance | 3.13 °C/W |
The maximum drain‑source voltage is 600 V.
The typical total gate charge is 15 nC.
The channel‑to‑case thermal resistance is 3.13 °C/W.
The continuous drain current rating is 3 A.