This datasheet introduces R5205CND, a low resistance, high speed switching N-channel MOSFET. It is suitable for switching applications.
The ROHM R5205CND is a 10 V drive N‑channel MOSFET designed for high‑speed switching with low on‑resistance. The datasheet provides detailed electrical specifications, maximum ratings, and typical performance curves to aid circuit designers.
Key sections cover features, packaging, absolute maximum ratings, thermal resistance, and measurement circuits, along with a legal notice and contact information for further product details.
| Drain‑source voltage (VDS) | 525 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Pulsed drain current (ID,pulse) | 20 A |
| Input capacitance (Ciss) | 320 pF |
| Output capacitance (Coss) | 180 pF |
The device can withstand up to 525 V between drain and source.