R5021ANX is a 10V drive Nch MOSFET launched by Toshiba. It features low on-resistance, high speed, simple drive and easy paralleling.
The R5021ANX is a silicon N‑channel MOSFET designed for 10 V drive applications. It offers low on‑resistance, fast switching speed, and a gate‑source voltage rating of ±30 V, making drive circuits simple and allowing easy parallel use.
Typical applications include audio‑visual equipment, office‑automation devices, communications gear, and other electronic products. The device is supplied in a TO‑220FM package and includes detailed electrical, thermal, and switching characteristics for designers.
| Continuous drain current (ID) | 10.5 A |
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It is rated for a continuous drain current of 10.5 A.