This document describes the features and characteristics of the R6018ANX Nch 600V 18A power MOSFET produced by ROHM, including low on-resistance, fast switching speed, and ease of parallel use.
The R6018ANX is a 600 V, 18 A N‑channel power MOSFET in a TO‑220FM package. It offers low on‑resistance, fast switching, and easy parallel operation, making it suitable for switching power supplies and other high‑power circuits.
The datasheet provides absolute maximum ratings, thermal characteristics, electrical parameters, body‑diode data, typical characteristic curves, and mechanical dimensions, along with legal notices and contact information for ROHM.
| Pulsed drain current (ID,pulse) | 72 A |
|---|---|
| Gate‑Source voltage (VGS) rating | 30 V |
| Power dissipation (PD) at 25 °C | 50 W |
| Junction temperature max (Tj) | 150 °C |
| Thermal resistance, junction‑to‑case (Rjc) | 2.5 °C/W |
| Thermal resistance, junction‑to‑ambient (Rja) | 70 °C/W |
The gate‑source voltage is guaranteed up to +30 V.
The device can dissipate up to 50 W at 25 °C.