This document introduces the structure, dimensions, features, and applications of ROHM's RQ1E075XN 4V Drive Nch MOSFET. It features low on-resistance, built-in G-S protection diode, and small surface mount package (TSMT8).
The RQ1E075XN is a silicon N‑channel MOSFET designed for low on‑resistance switching applications. It features a built‑in G‑S protection diode and a compact surface‑mount package (TSMT8).
The datasheet details absolute maximum ratings, thermal resistance, and detailed electrical characteristics such as drain‑source voltage, continuous drain current, gate threshold, capacitances, and typical transfer curves, along with measurement circuit diagrams and usage notes.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Continuous drain current (ID) | 47.5 A |
| Gate threshold voltage (VGS(th)) | 1.0 – 2.5 V |
| Input capacitance (CISS) | 440 pF |
| Output capacitance (COSS) | 170 pF |
| Reverse transfer capacitance (CRSS) | 85 pF |
| Total gate charge (Qg) | 6.8 nC |
| Power dissipation (PD) | 1.5 W |
| Thermal resistance (RθJA) | 83.3 °C·W |
The maximum drain‑source voltage is 30 V.
It can handle a continuous drain current of 47.5 A.
The gate threshold voltage ranges from 1.0 V to 2.5 V.
The input capacitance is 440 pF.