1.5V Drive Pch MOSFET RQ1A070ZP is a silicon P-channel MOSFET with low on-resistance, low voltage drive (1.5 V), and high power package. It is suitable for switching applications.
The RQ1A070ZP is a silicon P‑channel MOSFET designed for low‑on‑resistance and low‑voltage drive applications. It is intended for use in switching circuits across audio‑visual, office‑automation, communication, and consumer electronic equipment.
Key data include a maximum drain‑source voltage of -12 V, a continuous drain current of 7 A, on‑state resistance as low as 11 mΩ, and a total power dissipation of 1.5 W. The device also features an internal body diode and is supplied in a TSMT3 package with a 3000‑piece ordering unit.
| Drain‑source voltage (V_DSS) | -12 V |
|---|---|
| Gate‑source voltage (V_GSS) | +10 V |
| Continuous drain current (I_D) | +7 A |
| Pulsed drain current | +28 A |
| Total power dissipation (P_D) | 1.5 W |
| Channel temperature rating (Tj) | 150 °C |
| Storage temperature range | -55 to +150 °C |
| On‑state resistance (R_DS(on)) | 11–16 mΩ |
| Input capacitance (C_iss) | 7400 pF |
| Output capacitance (C_oss) | 800 pF |
| Reverse transfer capacitance (C_rss) | 750 pF |
| Total gate charge (Q_g) | 58 nC |
| Body diode forward voltage | 1.2 V |
The maximum drain‑source voltage is -12 V.
The typical on‑state resistance ranges from 11 mΩ to 16 mΩ.
The channel can operate up to 150 °C, and the storage temperature range is –55 °C to +150 °C.
Yes, it includes a body diode with a forward voltage of about 1.2 V at 7 A.