RQ1C065UN is a 1.5V Drive Nch MOSFET from ROHM. It features low on-resistance, high power package and low voltage drive.
The ROHM RQ1C065UN is a low‑on‑resistance, 1.5 V‑drive N‑channel MOSFET packaged in a TSMT8 (8 A) case. It is intended for switching applications and includes built‑in body diodes.
The document provides absolute maximum ratings, thermal characteristics, electrical parameters, and typical application circuits, along with measurement methods for switching time and gate charge.
| Drain‑source voltage (VDS) | 20 V |
|---|---|
| Gate‑source voltage (VGS) | +10 V |
| Continuous drain current (ID) | 6.5 A |
| Pulsed drain current (IDp) | 26 A |
| Power dissipation (PD) | 15 W |
| Maximum channel temperature (TCH) | 150 °C |
| Thermal resistance (RθJA) | 83.3 °C/W |
| Gate threshold voltage (VGS(th)) | 0.3 V – 1.0 V |
The MOSFET can tolerate up to 20 V drain‑source voltage.
It is rated for a continuous drain current of 6.5 A.
The gate threshold voltage varies between 0.3 V and 1.0 V.