RQ1C075UN is a low voltage drive N-channel MOSFET with low on-resistance, high power package and 1.5V drive characteristic.
The RQ1C075UN is a 1.5 V drive N‑channel MOSFET offered by ROHM. It is intended for switching applications and is supplied in a high‑power TSMT8 package.
The datasheet lists key electrical parameters such as a 20 V drain‑source rating, 10 V gate‑source limit, 7.5 A continuous drain current, and a typical on‑state resistance. Thermal resistance, packaging details, and measurement circuit diagrams are also provided to aid designers in implementing the device safely.
| Drain‑source voltage (VDS) | 20 V |
|---|---|
| Gate‑source voltage (VGS) | +10 V |
| Continuous drain current (ID) | 7.5 A |
| Pulsed drain current (IDp) | 30 A |
| Power dissipation (PD) | 1.5 W |
| Thermal resistance (RθJA) | 83.3 °C/W |
The device is rated for a maximum drain‑source voltage of 20 V.
The continuous drain current is specified as 7.5 A.
The gate‑source voltage rating is up to +10 V.