RQ1E050RP is a P-channel MOSFET produced by ROHM. The maximum operating voltage is 4V, the on-resistance is low, and it is suitable for switching circuits.
The RQ1E050RP is a silicon P‑channel MOSFET designed for 4 V drive applications. It features a low on‑resistance, a high‑power TSMT8 package, and is intended for switching use.
The datasheet provides absolute maximum ratings, thermal resistance, and full electrical characteristics such as drain‑source voltage, gate‑source voltage, on‑resistance, capacitances, and switching times, along with typical characteristic curves and measurement circuit diagrams.
| Drain‑source voltage (V_DSS) | -30 V |
|---|---|
| Gate‑source voltage (V_GSS) | 4 V (typ) |
| Continuous drain current (I_D) | 15 A |
| Pulsed drain current (I_D(pulse)) | 20 A |
| Power dissipation (P_D) | 1.5 W |
| Thermal resistance, junction‑to‑ambient (RθJA) | 83.3 °C/W |
| Storage temperature range | -55 °C to +150 °C |
| Input capacitance (Ciss) | 1300 pF |
| Output capacitance (Coss) | 180 pF |
| Reverse transfer capacitance (Crss) | 160 pF |
| Turn‑on delay time | 10 ns |
| Rise time | 15 ns |
| Total gate charge (Qg) | 13 nC |
The device is rated for a drain‑source voltage of –30 V.
The gate threshold voltage ranges from –1.0 V to –2.5 V.
The MOSFET is intended for switching applications.