This document describes the features and characteristics of the RQ1E100XN Nch 30V 10A Power MOSFET product from ROHM, including low on-resistance, built-in G-S protection diode, and small surface mount package.
The RQ1E100XN is a 30 V, 10 A N‑channel power MOSFET offered in a compact TSMT8 surface‑mount package. It features low on‑resistance, a built‑in gate‑source protection diode, and complies with RoHS standards.
The datasheet provides absolute maximum ratings, electrical characteristics, thermal resistance values, typical output curves, and mechanical dimensions, along with packaging and ordering information.
| Drain‑Source voltage (VDS) | 30 V |
|---|---|
| Continuous drain current (ID) | 10 A |
| Pulsed drain current (ID,pulse) | 36 A |
| Gate‑Source voltage (VGS) | 20 V |
| Power dissipation (PD) | 1.5 W |
| Junction temperature (Tj) | 150 °C |
The device is rated for a maximum drain‑source voltage of 30 V.
It can continuously conduct up to 10 A.
Yes, the package is Pb‑free and RoHS compliant.