RU1E002SP is a 4V drive Pch MOSFET produced by ROHM. It has high-speed switching, small package (UMT3F) and 4V drive.
The RU1E002SP is a 4 V drive P‑channel MOSFET offered in a small UMT3F package. The sheet lists its key features, absolute maximum ratings, thermal resistance, and detailed electrical characteristics for designers.
Additional sections cover body‑diode behavior, characteristic curves, measurement circuits, and legal notices. The document is intended for engineers designing general‑use electronic equipment and includes recommended operating and storage conditions.
| Drain‑source voltage (VDS) | -30 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Power dissipation (PD) | 0.2 W |
| Channel temperature (TCH) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
The maximum drain‑source voltage is -30 V.
It can be stored from -55 °C up to +150 °C.
The gate threshold voltage ranges from -1 V to -2.5 V.