RTR040N03 is a Nch MOS FET with the following features: 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).
The RTRO40N03 is a low‑on‑resistance N‑channel MOSFET with a built‑in gate‑source protection diode and a compact TSMT3 surface‑mount package. It is intended for power‑switching applications such as DC‑DC converters.
The document lists absolute maximum ratings, typical electrical parameters, and characteristic curves, along with packaging details and measurement circuit examples for designers.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | 12 V |
| Continuous drain current (ID) | 4.0 A |
| Total power dissipation (PD) | 1.0 W |
| Storage temperature range | -55 °C to +150 °C |
The maximum drain‑source voltage is 30 V.
It can handle a continuous drain current of 4.0 A.
The typical gate‑source voltage rating is 12 V.
The device can dissipate up to 1.0 W of power.