This document describes the features and characteristics of the RTR020N05 transistor, including low on-resistance, small surface mount package, and low voltage drive.
The RTR020N05 is a low‑voltage (2.5 V) drive N‑channel MOSFET offered in a space‑saving TSMT3 surface‑mount package. It features a low on‑resistance, built‑in ESD protection diode, and a body diode for reverse polarity protection.
Typical applications include switching circuits in audio‑visual equipment, office automation, communications devices, and other electronic products. The datasheet provides absolute maximum ratings, thermal resistance, and full electrical characteristics for circuit designers.
| Drain‑source voltage (VDS) max | 45 V |
|---|---|
| Gate‑source voltage (VGS) max | 4.5 V |
The device can withstand up to 45 V between drain and source.
The gate threshold voltage is 4.5 V.