This document describes the features and characteristics of the RTQ045N03 Transistors Rev.C 1/3 2.5V Drive Nch MOS FET, including low on-resistance, built-in G-S protection diode, and small surface mount package. The product is suitable for power switching and DC / DC converters.
The RTQ045N03 is a low‑on‑resistance N‑channel MOSFET with a built‑in gate‑source protection diode, offered in a compact TSMT6 surface‑mount package. It is intended for power‑switching applications such as DC‑DC converters.
The document lists absolute maximum ratings, thermal resistance, detailed electrical characteristics, and typical performance curves, along with packaging and ordering information. An appendix contains legal and export‑control notices.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Continuous drain current (ID) | 45 A |
| Gate threshold voltage (VGS(th)) | 0.5 – 1.5 V |
| Total power dissipation (PD) | 1.25 W |
| Storage temperature range | -55 °C to +150 °C |
The device can tolerate up to 30 V between drain and source.
It is rated for a continuous drain current of 45 A.
The gate threshold voltage varies between 0.5 V and 1.5 V.
The maximum power dissipation is 1.25 W.