RTQ035N03 is a ROHM N-channel MOSFET with low on-resistance, small package size and low voltage drive. Applications include switch mode power supplies, LED drivers, etc.
The RTQ035N03 is a silicon N‑channel MOSFET designed for low‑voltage drive (2.5 V) and low on‑resistance. It is offered in a space‑saving surface‑mount TSMT6 package.
Typical applications include switching circuits for audio‑visual equipment, office automation, communications devices, and other electronic products. The device includes built‑in ESD and body diodes for added protection.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | 12 V |
| Continuous drain current (ID) | 43.5 A |
| Total power dissipation (PD) | 1.25 W |
| Thermal resistance, channel‑to‑ambient (RθJA) | 100 °C/W |
| Input capacitance (CISS) | 285 pF |
| Output capacitance (COSS) | 90 pF |
| Reverse transfer capacitance (CRSS) | 55 pF |
| Turn‑on delay time (tON) | 8 ns |
| Rise time (tr) | 12 ns |
| Turn‑off delay time (tOFF) | 29 ns |
| Fall time (tf) | 13 ns |
| Total gate charge (Qg) | 46 nC |
| Gate‑source charge (Qgs) | 0.7 nC |
| Gate‑drain charge (Qgd) | 1.5 nC |
| Body diode forward voltage (VF) | 1.2 V |
The device can withstand up to 30 V between drain and source.
It is rated for a gate‑source voltage of 12 V.
It can conduct a continuous drain current of 43.5 A.
It is supplied in a small surface‑mount TSMT6 package.