This document introduces the RTQ020N05 product from ROHM. The product is a low voltage drive N-channel MOSFET with low on-resistance and a small surface mount package. It is mainly used in switching circuits. The document also provides detailed information on the product's dimensions, maximum ratings, thermal resistance, and electrical characteristics.
The RTQ020N05 is a low‑on‑resistance N‑channel MOSFET designed for 2.5 V drive operation and offered in a compact TSMT6 surface‑mount package. Key features include low on‑resistance, small footprint, and built‑in ESD protection.
The document lists absolute maximum ratings, detailed electrical characteristics, thermal resistance data, and typical output and transfer curves. Packaging information, measurement circuits, and a legal notice are also included to guide designers in proper use of the device.
| Drain‑source voltage (VDS) | 45 V |
|---|---|
| Gate‑source voltage (VGS) | 12 V |
| Continuous drain current (ID) | 2 A |
| Total power dissipation (PD) | 1.25 W |
| Thermal resistance (RθJA) | 100 °C/W |
The device can withstand up to 45 V between drain and source.
It is rated for a continuous drain current of 2 A.
The MOSFET is supplied in a TSMT6 surface‑mount package.
Yes, an ESD protection diode is integrated in the device.