RTQ020N03 is a N-channel MOSFET produced by ROHM. It has the advantages of low on-resistance, small package and low drive voltage. It is suitable for switch power supply, motor drive and other applications.
The RTQ020N03 is a silicon N‑channel MOSFET designed for low‑voltage drive (2.5 V) and space‑saving applications. It offers low on‑resistance and is supplied in a compact TSMT6 surface‑mount package.
The document lists absolute maximum ratings, electrical characteristics, and packaging details, along with application notes and export‑control information. Key parameters such as drain‑source voltage, gate‑source voltage, and thermal resistance are provided for designers.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | 12 V |
| Continuous drain current (ID) | 42.0 A |
| Pulsed drain current (ID,pulse) | 8.0 A |
| Total power dissipation (PD) | 1.25 W |
| Thermal resistance, junction‑to‑ambient (RθJA) | 100 °C/W |
| Package | TSMT6 (surface‑mount) |
The device can withstand up to 30 V drain‑source voltage.
It is supplied in a TSMT6 surface‑mount package.
The transistor can be stored from –55 °C to +150 °C.
It operates with a low voltage drive of 2.5 V.