RTL035N03 is a silicon N-channel MOSFET with low on-resistance, space-saving small surface mount package (TUMT6) and low voltage drive (2.5V drive). It can be used for switching applications.
The RTL035N03 is a low‑on‑resistance N‑channel MOSFET designed for switching applications. It features a low voltage drive of 2.5 V and a compact TUMT6 surface‑mount package, making it suitable for space‑constrained designs. Key specifications include a maximum drain‑source voltage of 30 V, on‑resistance of 56 mΩ, and a gate charge of 0.86 nC.
The device is intended for use in a variety of electronic equipment such as audio‑visual, office automation, and communications gear. For high‑reliability applications like medical or aerospace equipment, consult ROHM sales representatives before use. The datasheet also includes absolute maximum ratings, thermal resistance data, and body‑diode characteristics.
| Maximum Gate‑Source Voltage (VGS) | 4.5 V |
|---|---|
| Body Diode Forward Voltage | 1.2 V |
| Package | TUMT6 surface‑mount |
It is designed for a low voltage drive of 2.5 V.