RT1A060AP is a low voltage drive (1.5V drive) P-channel MOSFET produced by ROHM. It has low on-resistance and small package, and is suitable for switching applications.
The RT1A060AP is a 1.5 V drive P‑channel MOSFET designed for low on‑resistance and small footprint. It is supplied in a TSST8 surface‑mount package and is intended for switching applications.
The datasheet provides absolute maximum ratings, electrical characteristics, thermal data, and typical application circuits. Packaging details, measurement setups, and safety notices are also included.
| Drain‑source voltage (VDS) | -12 V |
|---|---|
| Gate‑source voltage (VGS) | -8 V |
| Continuous drain current (ID) | +6 A |
| Source current (IS) continuous | -1 A |
| Power dissipation (PD) | 1.25 W |
| Channel temperature (TCH) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Thermal resistance (RθJA) | 100 °C/W |
| Input capacitance (Ciss) | 7800 pF |
| Output capacitance (Coss) | 900 pF |
| Reverse transfer capacitance (Cres) | 850 pF |
| Turn‑on delay (tON) | 25 ns |
| Rise time (tr) | 100 ns |
| Turn‑off delay (tOFF) | 580 ns |
| Fall time (tf) | 260 ns |
| Total gate charge (Qg) | 80 nC |
| Gate‑source charge (Qgs) | 12 nC |
| Gate‑drain charge (Qgd) | 13 nC |
| Body diode forward voltage | 1.2 V |
The device can withstand up to –12 V between drain and source.
It is supplied in a small surface‑mount TSST8 package.
The MOSFET is designed for a 1.5 V drive voltage.
The part can be stored from –55 °C to +150 °C.