This is a datasheet for RTF016N05 Nch 45V 1.6A Power MOSFET, which introduces its features and characteristics, such as low on-resistance, built-in G-S protection diode, and small surface mount package.
The RTF016N05 is a 45 V N‑channel power MOSFET with low on‑resistance, a built‑in gate‑source protection diode and a compact TUMT3 surface‑mount package. The datasheet provides electrical characteristics, thermal data, packaging details and typical application curves.
Key features include a continuous drain current of 1.6 A, a maximum power dissipation of 0.8 W, and compliance with RoHS. The document also lists absolute maximum ratings, thermal resistance values, and mechanical dimensions for PCB layout.
| Drain‑Source voltage (VDS) | 45 V |
|---|---|
| Continuous drain current (ID) | 1.6 A |
| Junction temperature (Tj) max | 150 °C |
| Thermal resistance, junction‑ambient (Rja) typ | 156 °C/W |
| Gate‑Source voltage max (VGS) | +12 V |
| Gate threshold voltage (VGS(th)) | 0.5‑1.5 V |
The device can withstand up to 45 V between drain and source.
It is rated for a continuous drain current of 1.6 A.
The maximum gate‑source voltage is +12 V.
Typical junction‑to‑ambient thermal resistance is 156 °C/W.