The 4V Drive Pch MOSFET RT1E050RP is a silicon P-channel MOSFET with low on-resistance, high power package, and 4V drive capability. It is suitable for switching applications.
The ROHM RT1E050RP is a 4 V drive P‑channel MOSFET presented in a high‑power package. The data sheet lists its structure, key features such as low on‑resistance and high current capability, and typical application areas like switching circuits.
Detailed electrical parameters, absolute maximum ratings, packaging dimensions, and measurement circuit diagrams are included. The document also contains legal notices and usage guidelines for designers integrating the device into electronic equipment.
| Drain‑source voltage | -30 V |
|---|---|
| Gate‑source voltage | +20 V |
| Continuous drain current | 15 A |
| Power dissipation | 1.25 W |
| Maximum channel temperature | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Thermal resistance (channel‑to‑ambient) | 100 °C/W |
The device can handle a continuous drain current of 15 A.
The gate‑source voltage rating is up to +20 V.
It is rated for a power dissipation of 1.25 W.
The device can be stored from –55 °C to +150 °C.