This document describes the features and characteristics of the ROHM RT1E060XN Nch 30V 6A Power MOSFET, including low on-resistance, built-in G-S protection diode, small surface mount package, etc.
The RT1EQ60XN is a 30 V, 6 A N‑channel power MOSFET offered in a compact TSST8 surface‑mount package. It features low on‑resistance and an integrated gate‑source protection diode, making it suitable for DC‑DC converter applications and other power‑switching circuits.
Key specifications include a maximum drain‑source voltage of 30 V, continuous drain current of 6 A, power dissipation of 1.25 W, and a junction temperature rating up to 150 °C. The datasheet also provides detailed thermal resistance values, capacitance data, and characteristic curves to aid in circuit design.
| Drain‑Source voltage (VDS) | 30 V |
|---|---|
| Continuous drain current (ID) | 6 A |
| Power dissipation (PD) | 1.25 W |
| Junction temperature (Tj) | 150 °C |
| Gate‑Source voltage (VGS) | +20 V |
| Gate threshold voltage (VGS(th)) | 1.0 V (typ) |
The maximum drain‑source voltage is 30 V.
It can handle a continuous drain current of 6 A.
It is supplied in a TSST8 surface‑mount package.
Typical on‑state resistance is about 0.23 Ω.