rtf015n03 is a nch mosfet produced by rohm company, which has the characteristics of low on-resistance, small size and low drive voltage. it is suitable for switching circuits
The RTF015N03 is a low‑on‑resistance N‑channel MOSFET designed for 2.5 V gate drive operation. It is offered in a compact TUMT3 surface‑mount package and is suitable for switching applications.
The datasheet lists absolute maximum ratings, thermal resistance, and detailed electrical parameters such as drain‑source voltage, continuous and pulsed drain currents, capacitances, and switching times. It also includes typical application circuits and notes on proper use and handling.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | 12 V |
| Continuous drain current (ID) | 15 A |
| Pulsed drain current (ID,pulse) | 46 A |
| Total power dissipation (PD) | 0.8 W |
| Maximum junction temperature (TJ) | 150 °C |
| Storage temperature range | -55 to +150 °C |
| Thermal resistance (RθJA) | 156 °C/W |
| Input capacitance (Ciss) | 80 pF |
| Output capacitance (Coss) | 14 pF |
| Reverse transfer capacitance (Crrs) | 12 pF |
| Gate‑source charge (Qgs) | 0.5 nC |
| Gate‑drain charge (Qgd) | 0.3 nC |
| Package | TUMT3 surface‑mount |
The device can withstand up to 30 V drain‑source voltage.
It is rated for a continuous drain current of 15 A.
The MOSFET is supplied in a TUMT3 surface‑mount package.