RT1E040RP is a P-channel MOSFET produced by ROHM. Its features are low on-resistance, high power package, and 4V drive.
The ROHM RT1E040RP is a 4 V drive P‑channel MOSFET presented in a high‑power package. The data sheet provides detailed electrical characteristics, absolute maximum ratings, thermal resistance, and packaging information for designers.
Typical application circuits, measurement setups, and usage notes are included, along with legal and safety notices from ROHM.
| Drain‑source voltage (V_DSS) | 30 V |
|---|---|
| Gate‑source voltage (V_GSS) | +20 V |
| Continuous drain current (I_D) | 4 A |
| Pulsed drain current (I_D(pulse)) | 16 A |
| Power dissipation (P_D) | 1.25 W |
| Channel temperature (T_CH) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
The RT1E040RP can withstand up to 30 V drain‑source voltage.
It is rated for a continuous drain current of 4 A.
The device can dissipate up to 1.25 W under specified conditions.
The component may be stored from –55 °C up to +150 °C.