RT1C060UN Nch 20V 6A Power MOSFET is a low on-resistance power MOSFET device with built-in G-S Protection Diode, small Surface Mount Package (TSST8), Pb-free lead plating and so on.
The RT1C060UN is a low‑on‑resistance N‑channel MOSFET designed for DC‑DC converters and other power applications. It features a built‑in gate‑source protection diode and complies with RoHS standards.
Key specifications include a 20 V drain‑source rating, 6 A continuous drain current, 1.25 W power dissipation, and a TSST8 surface‑mount package. Detailed electrical characteristics, thermal data, and typical output curves are provided for circuit design.
| Drain‑Source Voltage (VDS) | 20 V |
|---|---|
| Continuous Drain Current (ID) | 6 A |
| Power Dissipation (PD) | 1.25 W |
| Gate‑Source Voltage (VGS) | +10 V |
| Junction Temperature (TJ) | 150 °C |
| Package | TSST8 surface‑mount |
The RT1C060UN can handle up to 20 V drain‑source voltage.
It is rated for a continuous drain current of 6 A.
The device is supplied in a TSST8 surface‑mount package.